Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Ferroelectric Hafnium–based oxides has attracted lots of attention due to the process compatible with currently CMOS process. The physical thickness of the Hafnium–based oxides can be thin down to nanometer scale with the ALD (Atomic Layer Deposition) technolo...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/54760527094901135649 |
id |
ndltd-TW-104NTNU5614007 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-104NTNU56140072017-08-12T04:35:42Z http://ndltd.ncl.edu.tw/handle/54760527094901135649 Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications 俱鐵電效應之鉿基氧化物於負電容及記憶體應用 Xie, Meng-Jie 謝孟傑 碩士 國立臺灣師範大學 光電科技研究所 104 Ferroelectric Hafnium–based oxides has attracted lots of attention due to the process compatible with currently CMOS process. The physical thickness of the Hafnium–based oxides can be thin down to nanometer scale with the ALD (Atomic Layer Deposition) technology. The ferroelectricity of Hafnium–based oxides is achieved with properly dopants and annealing. The expected advantages, such as low power consumption and high speed operation, may be obtained for the applications of negative capacitance effect and memory. In this study, the Hafnium-Zirconium oxide would be processed and studied. The NC-FETs and FeRAM are fabricated for the response time and operation speed studies. The feasibility of the logic circuit and nonvolatile memory with ferroelectric Hafnium-Zirconium oxide would be discussed in this work. Lee, Min-Hung 李敏鴻 2016 學位論文 ; thesis 81 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Ferroelectric Hafnium–based oxides has attracted lots of attention due to the process compatible with currently CMOS process. The physical thickness of the Hafnium–based oxides can be thin down to nanometer scale with the ALD (Atomic Layer Deposition) technology. The ferroelectricity of Hafnium–based oxides is achieved with properly dopants and annealing. The expected advantages, such as low power consumption and high speed operation, may be obtained for the applications of negative capacitance effect and memory. In this study, the Hafnium-Zirconium oxide would be processed and studied. The NC-FETs and FeRAM are fabricated for the response time and operation speed studies. The feasibility of the logic circuit and nonvolatile memory with ferroelectric Hafnium-Zirconium oxide would be discussed in this work.
|
author2 |
Lee, Min-Hung |
author_facet |
Lee, Min-Hung Xie, Meng-Jie 謝孟傑 |
author |
Xie, Meng-Jie 謝孟傑 |
spellingShingle |
Xie, Meng-Jie 謝孟傑 Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications |
author_sort |
Xie, Meng-Jie |
title |
Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications |
title_short |
Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications |
title_full |
Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications |
title_fullStr |
Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications |
title_full_unstemmed |
Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications |
title_sort |
ferroelectric hafnium–based oxides for negative capacitance and memory applications |
publishDate |
2016 |
url |
http://ndltd.ncl.edu.tw/handle/54760527094901135649 |
work_keys_str_mv |
AT xiemengjie ferroelectrichafniumbasedoxidesfornegativecapacitanceandmemoryapplications AT xièmèngjié ferroelectrichafniumbasedoxidesfornegativecapacitanceandmemoryapplications AT xiemengjie jùtiědiànxiàoyīngzhījiājīyǎnghuàwùyúfùdiànróngjíjìyìtǐyīngyòng AT xièmèngjié jùtiědiànxiàoyīngzhījiājīyǎnghuàwùyúfùdiànróngjíjìyìtǐyīngyòng |
_version_ |
1718515981661241344 |