Ferroelectric Hafnium–based Oxides for Negative Capacitance and Memory Applications

• Main Authors: Xie, Meng-Jie, 謝孟傑
• Other Authors: Lee, Min-Hung
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/54760527094901135649

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Ferroelectric Hafnium–based oxides has attracted lots of attention due to the process compatible with currently CMOS process. The physical thickness of the Hafnium–based oxides can be thin down to nanometer scale with the ALD (Atomic Layer Deposition) technology. The ferroelectricity of Hafnium–based oxides is achieved with properly dopants and annealing. The expected advantages, such as low power consumption and high speed operation, may be obtained for the applications of negative capacitance effect and memory. In this study, the Hafnium-Zirconium oxide would be processed and studied. The NC-FETs and FeRAM are fabricated for the response time and operation speed studies. The feasibility of the logic circuit and nonvolatile memory with ferroelectric Hafnium-Zirconium oxide would be discussed in this work.