Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. Howeve...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04091130890836214975 |