Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction

Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. Howeve...

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Main Authors: HUANG, Shao-Jia, 黃紹嘉
Other Authors: Lee, Min-Hung
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/04091130890836214975
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spelling ndltd-TW-104NTNU56140102017-09-03T04:25:57Z http://ndltd.ncl.edu.tw/handle/04091130890836214975 Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction 摻雜之二硫化硒層狀材料在作為場效應電晶體通道對降低源/汲極接觸電阻之研究 HUANG, Shao-Jia 黃紹嘉 碩士 國立臺灣師範大學 光電科技研究所 104 Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained. Lee, Min-Hung Jong, Chao-An 李敏鴻 鍾朝安 2016 學位論文 ; thesis 103 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立臺灣師範大學 === 光電科技研究所 === 104 === Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.
author2 Lee, Min-Hung
author_facet Lee, Min-Hung
HUANG, Shao-Jia
黃紹嘉
author HUANG, Shao-Jia
黃紹嘉
spellingShingle HUANG, Shao-Jia
黃紹嘉
Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
author_sort HUANG, Shao-Jia
title Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
title_short Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
title_full Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
title_fullStr Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
title_full_unstemmed Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction
title_sort study of doping layered-wse2 material as field effect transistor channel for source/drain contact resistance reduction
publishDate 2016
url http://ndltd.ncl.edu.tw/handle/04091130890836214975
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AT huángshàojiā studyofdopinglayeredwse2materialasfieldeffecttransistorchannelforsourcedraincontactresistancereduction
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AT huángshàojiā cànzázhīèrliúhuàxīcéngzhuàngcáiliàozàizuòwèichǎngxiàoyīngdiànjīngtǐtōngdàoduìjiàngdīyuánjíjíjiēchùdiànzǔzhīyánjiū
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