The Effect of Contact-Etch-Stop-Layer and Si1-xGex Channel Mechanical Properties on Nano-Scaled Short Channel NMOSFETs with Dummy Gate Array

碩士 === 國立臺灣師範大學 === 機電工程學系 === 104 === The study focused on analyzing the stress distribution and performance of N-type transistors with silicon germanium channel and dummy gate arrays structure under different gate widths, numbers of dummy gate arrays, and gate pitch (Poly-to-Poly) spacings. Resear...

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Bibliographic Details
Main Authors: Li, Dian-Yong, 李典勇
Other Authors: Liu, Chuan-Hsi
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/74454443152589848045