Ferroelectric of HfO2 dielectric layer by high power impulse magnetron sputtering for MIM capacitors

碩士 === 國立臺灣師範大學 === 機電工程學系 === 104 === Ferroelectric material is now one of the popular research objectives. Due to the current development of technology, the size of electronic components become smaller and smaller. However, the film thickness of the conventional ferroelectric material is about few...

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Bibliographic Details
Main Authors: Shih, Teng-Yuan, 石登元
Other Authors: Liu, Chuan-Hsi
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/96874343596052353124