| Summary: | 碩士 === 國立臺灣師範大學 === 機電工程學系 === 104 === Ferroelectric material is now one of the popular research objectives. Due to the current development of technology, the size of electronic components become smaller and smaller. However, the film thickness of the conventional ferroelectric material is about few hundred nanometers and the current leakage is large, thus effecting the application of ferroelectric material used in memory devices. Therefore, scientists began looking for new ferroelectric materials such as HfO2, ZrO2 and other materials with the opportunity to replace the conventional ferroelectric materials. HfO2 is the choice for many researchers who try to use different deposition methods to find out the ferroelectric properties in HfO2 films.
In this research, we used High Power Impulse Magnetron Sputtering (HIPIMS) for the deposition of HfO2 ferroelectric layers. The basic structure of the sample was Al/HfO2/Mo/p-Si which Al and Mo depositing by DC sputter. In Group 1, we doped Zr into HfO2 to form HfO2:Zr layer. In Group 2, we deposited a Zr layer above the HfO2 layer. In Group 3, we formed two different structures in which TiN and ZrN were separately deposited above and at the below HfO2. Then measurements of ferroelectric and physical properties were performed for all the samples.
Keywords: HIPIMS, Ferroelectric material, HfO2
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