Electrical and Optical Properties of SiGe Heterostructure with Wrinkled Pattern
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === As the semiconductor technology has been developed from 90 nm strained-silicon technology, 45 nm high-k metal gate technology to the fin-FET technology which is developed in recent years, meaning there is a bottleneck of the device scaling down. It’s expected...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42479504440236525264 |