TCAD Simulation of n-type InAs MOSCAPs with High-κ Dielectric Layer
碩士 === 國立臺灣大學 === 電子工程學研究所 === 104 === In the thesis, the characteristics of the Metal-Oxide-Semiconductor capacitor (MOSCAP), fabricated by III-V semiconductors and high-κ materials, are investigated. The III-V semiconductor we choose is InAs. Because of its small electron effective mass, InAs is a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05869089824150859878 |