Electronic Transport Properties in ReS2 Two-dimensional Nanostructures

碩士 === 國立臺灣科技大學 === 應用科技研究所 === 104 === We report the electronic transport properties in layer semiconductor of rhenium disulphide (ReS2) grown by chemical vapor transport (CVT). The ReS2 layer nanostructure devices were fabricated using focused-ion beam (FIB) deposition and platinum (Pt) as the con...

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Bibliographic Details
Main Authors: Ching-Hsuan Lin, 林敬軒
Other Authors: Ruei-San Chen
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/97573559580510191567