Processing and Property Characterization of Zn-Doped GaN and Zn-Doped InGaN Thin Films Prepared by Reactive Sputtering
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 104 === In this research, we successfully deposited p-type Zn-doped GaN and InGaN (Zn-GaN and Zn-InGaN) films by RF sputtering with single cermet targets. The targets were made by hot pressing the powder mixture of metallic Ga, Zn, and In and ceramic GaN. In addition...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4e7xur |