The study of resistive switching and voltage-controlled magnetic properties of HfO2 films
碩士 === 國立高雄大學 === 應用物理學系碩士班 === 104 === The ReRAM will be one of the most powerful potential memorial unit in next generation. The advantage includes in low-power operation, low cost, simple structure, and good retention. According to the previous research, hafnium oxide also share the same characte...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7v9fmg |