Investigation on characteristics of tantalum/molydenum and titanium/zirconium isomorphous alloy gates on hafnium oxide dielectrics
碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 104 === High-k/metal gate (HKMG) technology has become the mainstream in high-performance logic devices for sub 45 nm technology nodes. In this research, we will integrate the HKMG structure for the next generation transistor. We will deposit an amorphous metal allo...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/g57snf |