Investigation on characteristics of tantalum/molydenum and titanium/zirconium isomorphous alloy gates on hafnium oxide dielectrics
碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 104 === High-k/metal gate (HKMG) technology has become the mainstream in high-performance logic devices for sub 45 nm technology nodes. In this research, we will integrate the HKMG structure for the next generation transistor. We will deposit an amorphous metal allo...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/g57snf |