The study of Enhancement-mode GaN-based HEMTs formed by Selective-area Ion implantation technology
碩士 === 南臺科技大學 === 光電工程系 === 104 === Since the wide bandgap GaN/AlGaN heterostructures inherently possess spontaneous and strain-induced polarization fields to induce the high electron mobility and high carrier density at the GaN/AlGaN heterointerfaces, GaN/AlGaN-based high electron mobility transist...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vk3b3t |