Investigating the effect of Nitride-based Light Emitting Diodes Using Hole Injection Layer with different growth temperatures
碩士 === 南臺科技大學 === 電子工程系 === 104 === In order to improve polarization phenomenon of traditional light-emitting diodes between last quantum barrier and electron blocking layer, which caused by the hole injection efficiency droop, we design and investigate Mg doping of P-GaN with different growth tempe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ytkceq |