| Summary: | 碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 104 === In this study, for apply to the diffusion barrier layer. we investigate the material properties of Amorphous tantalum nitride thin film which is manufacturing by using 4N Titanium target in reactive sputter,different nitrogen flow, RF magnetron sputter and constant Argon flow.
Analysis different nitrogen flow’s amorphous tantalum nitride structure, surface topography,atomic percentage, resistance,surface roughness,thickness, capacitance and electric current by X-ray Diffraction(XRD), Scanning Electron Microscope(SEM),Wavelength Dispersive Spectrometer(WDS), Four-point probe(FPP), atomic force microscope(AFM) ,4200 and Surface profiler(-step).
In order to know which nitrogen flow is greatest as diffusion barrier to prevent diffusion of copper, The samples were then annealed at temperatures ranging from 400 to 900◦C in vacuum for 30 min, at a pressure better than 2 × 10−2 (Pa), After annealed, the samples were cooledspontaneously to room temperature in vacuum.
It was found that the tantalum nitride thin film which is provided 3.5 (sccm) nitrogen flow provide greatest diffusion beacause Cu-Si compound were formed in highest temperature by 800 °C in X-ray Diffraction(XRD),750 °C in Four-point probe(FPP),700 °C in C-V curve and this parameter’s tantalum nitride has greatest surface roughness(0.250 nm).The tantalum’s and nitrogen’s atomic percentage of 3.5 (sccm) nitrogen flow appear in TaN0.7.
In the end,we use Arrhenius equation and Fick’s second law to find out the diffusion coefficient D0=1.3x10-5[cm2/s]
|
|---|
