Fabrication of MoOx Resistive Random Access Memories by Using Radio Frequency Sputtering
碩士 === 國立雲林科技大學 === 電子工程系 === 104 === In this work, molybdenum oxide films were deposited by radio frequency sputtering of a MoO3 target at various oxygen flow rates. Characteristics of the MoOx films were analyzed by XRD, SEM, UV-Vis and XPS. Bipolar resistive switching characteristic of the MoOx R...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/55923824702858965744 |