A 1.8/2.6 GHz CMOS High Linearity Power Amplifier For LTE Application
碩士 === 元智大學 === 通訊工程學系 === 104 === The research presents a “high linearity cmos power amplifier”. This PA employed active inductor and transistor switch technique. Cascode structure can solve the low breakdown voltage and have high power gain, cascode was used. The active inductor can reduce the chi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54422987004616797801 |