Field-free magnetization reversal by spin-orbit torque in MgO/CoFeB/Ta/CoFeB/MgO symmetric structure with interlayer antiferromagnetic coupling
博士 === 國立中正大學 === 物理系研究所 === 105 === Recently, is has been discovered that the magnetization of an ultra-thin out-of-plane ferromagnetic layer can be switched by the spin Hall effect (SHE). This spin Hall switching is a major contender for the write mechanism in novel magnetic memory devices such as...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7bvrm2 |