SiOx based resistive switching memory devices for biosensor applications
博士 === 長庚大學 === 電子工程學系 === 105 === Recently, resistive switching memory device shows one of the promising candidates for replacing flash memory in three-dimensional (3D) architecture. Improved resistive switching phenomena such as device-to-device uniformity, lower formation voltage (2.8 V) and RESE...
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| Format: | Others |
| Language: | en_US |
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2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6xft4u |