Properties of Self-Assembled-Monolayer Encapsulated Electroless Copper Nanowires Fabricated by Using an All-Wet Process

• Main Authors: YANG, ZI-MING, 楊子明
• Other Authors: 陳錦山
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/64909285469077125456

碩士 === 逢甲大學 === 材料科學與工程學系 === 105 === Currently, sputter deposited TaN/Ta and electrochemically plated Cu metallization layers are the key interconnection thin-film materials for integrated circuits. However, in the face of future technology nodes scaling continues to decline, this wet and dry combination of copper inlay process has faced many difficulties (such as the barrier layer is too thick). The electroless plating cobalt alloy barrier layer is limit by the catalytic particles (3 nm) size. In this paper, SC-1 chemical solution was used to prepare the sample, and the sample was filled with hydroxyl group to facilitate the growth of APTMS. The APTMS solution on the surface of the sample was treated with SC-1 solution. Modified, so that it can be successfully to catch Ni catalytic seeds, and deposed electroless copper film. This process was subsequently introduced into the trench wafer (500 nm deep, line width is 100 nm and a line length is 25 μm). After completed to fill the grooved sample we uesd CMP to remove the surface copper of the sample, get a complete filled copper wire, and then used the weight percentage of 10% hydrogen peroxide to treat the copper film surface, and growth of APTMS-SAM on the copper film surface, and ultimately to obtain the complete coating of APTMS-SAM copper wire sample. Finally, CCS experiments were carried out on pure copper wire, APTMS-SAM partially-capping copper wire and APTMS-SAM all-capping copper wire, respectively. The collapse time of the three sample was 580 s, 1650 s and 2850 s. The results confirmed that APTMS -SAM does increase the reliability of copper wires.