The Characteristics of Junctionless Field Effect Transistor with Raised Source/Drain
碩士 === 逢甲大學 === 電子工程學系 === 105 === This thesis studies the electrical characteristics of Junctionless FET (JLFET) with raised source/drain. The channel material of JLFET device is polysilicon. The device structure is TiN/Al2O3/Poly-Si. This work investigates the device electrical characteristics, in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48383y |