The Association and Analysis on Power Discrete between the Width of Gate and the one of Source and New Data NFinFET Fitting Algorithm as Refered to non-Neglected Leakage Current
碩士 === 明新科技大學 === 電子工程系碩士班 === 105 === Both benefits of high input impedance of MOSFET and high current gain of Bipolar are appreciated and found in Insulated Gate Bipolar Transistor (IGBT). IGBT may control higher current at high voltage than any other power discrete. Of course, extremely high powe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6n8hk3 |