The Study of Breakdown Voltage Correlated with the Drift Region or Active Area and New Data NFinFET Fitting Algorithm Associated with Temperature Variation

碩士 === 明新科技大學 === 電子工程系碩士班 === 105 === Insulated Gate Bipolar Transistor (IGBT) has the merits of both high input impedance contributed from the Metal-Oxide-Silicon Field Effect Transistor (MOSFET) structure and high current gain contributed from the Bipolar Junction Transistor (BJT) structure. The...

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Bibliographic Details
Main Authors: Lu,Ting-Wei, 呂庭瑋
Other Authors: Yang,Hsin-Chia
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/9sj6qu