The Study of Breakdown Voltage Correlated with the Drift Region or Active Area and New Data NFinFET Fitting Algorithm Associated with Temperature Variation
碩士 === 明新科技大學 === 電子工程系碩士班 === 105 === Insulated Gate Bipolar Transistor (IGBT) has the merits of both high input impedance contributed from the Metal-Oxide-Silicon Field Effect Transistor (MOSFET) structure and high current gain contributed from the Bipolar Junction Transistor (BJT) structure. The...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9sj6qu |