Simulation of Gallium-nitride (GaN) Power Transistor Based Full-Bridge Phase Shift Converter with Zero-Voltage Switching
碩士 === 明志科技大學 === 電機工程系碩士班 === 105 === The Gallium-nitride (GaN) power transistors are popularly used in power electronic devices due to break through of material limits such as fine thermal stability, high breakdown voltage, high electron velocity, and high current density. This thesis aims to anal...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10630605789612233260 |