Fabrication and Characterization of High Voltage AlGaN/GaN Metal-Insulator-Semiconductor Field Effect Transistors
碩士 === 國立中興大學 === 材料科學與工程學系所 === 105 === AlGaN/GaN high electron mobility transistors (HEMTs) devices have been fabricated with 100m gate width, 5m gate length, 5m gate-source spacing, and 20m gate-drain spacing in the HEMT devices. A 573 mA/mm of the maximum current, a 2.31011 of the Ion/Ioff...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/13829904724503262027 |