Effects of different ethylene/argon ratios on the properties of thermal chemical vapor deposition carbon thin films

• Main Authors: Jui-Jen Wang, 王瑞仁
• Other Authors: Sham-Tsong Shiue
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/93752813808420554682

碩士 === 國立中興大學 === 材料科學與工程學系所 === 105 === This study investigates the effects of different ethylene/argon ratios on the properties of carbon films prepared by thermal chemical vapor deposition. In this experiment, the residual gas on the process, and the thickness and microstructure of carbon films were analyzed by residual gas analyzer, field emission scanning electron microscope, X-ray diffractometer, Raman scattering spectrometer, X-ray photoelectron spectroscopy, and atomic force microscopy. The measured results indicate that the main product of residual gas in the gas phase contains H2, C2H2, andC2H3. The deposition rate of carbon films increases with increasing the C2H4/(C2H4+Ar) ratio, but the crystallinity, degree of ordering, size of mean crystallite (La and Lc), and sp2 C＝C bonding of carbon film decrease. When the C2H4/(C2H4+Ar) ratio is low (for example, C2H4/(C2H4+Ar)=20%), the carbon source has enough time to deposit and stacking, forming a relatively smooth and orderly structure. As the C2H4/(C2H4+Ar) ratio increases, the deposition rate of carbon increases. The carbon film do not have enough time to stacking the carbon layers in sequence, resulting in a rugged island structure that makes the surface rougher. Additionally, as the C2H4/(C2H4+Ar) ratio increases, the decrease of sp2 C＝C bonds and the increase of surface particles of carbon films result in increasing the electrical resistivity of carbon films. Finally, the results of this study are also compared with those of relatively published papers.