Fabrication of Ni-silicide / Si Heterostructure Nanowires-based Photosensing Devices by Electric Field Assembly Method
碩士 === 國立中興大學 === 材料科學與工程學系所 === 105 === Transition metal silicides have been widely used as ohmic contacts, Schottky barrier contacts, gate electrodes and interconnects in silicon microelectronic devices because of their low resistivity and thermal stability. NiSi_2 has a small lattice mismatch of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67957857581350933894 |