Simulation Studies for Negative Capacitance Transistor: From Planar to Fin Structure
碩士 === 國立中興大學 === 電機工程學系所 === 105 === In order to overcome the physical limitation of the device scaling, the ferroelectric (FE) with a negative capacitance effect can be applied to solve this kind of problem, so that Subthreshold Swing (SS) can be lower to 60 mV / dec and the effect of device quick...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58692520367840513500 |