Molecular Dynamics Modeling for Single Layer Molybdenum Disulfide Fatigue Behavior and Fatigue Damage Mechanism in Different Stress Amplitude

碩士 === 國立成功大學 === 土木工程學系 === 105 === Recently, the semiconductor industry has reduced the size of the transistor in order to improve the performance of it. Advanced nanometer devices require new materials and new design concepts. Graphene-like two-dimensional(2D) transition metal dichalcogenides(TMD...

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Bibliographic Details
Main Authors: Ming-ChenChung, 鍾明臻
Other Authors: Hsuan-Teh Hu
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/uhzen5