Investigation of AlGaN/GaN HEMT and Its Sensor Electronic Applications
碩士 === 國立成功大學 === 微電子工程研究所 === 105 === In this thesis, aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) covered with silicon nitride passivation on silicon substrate were fabricated, the experimental topic is divided into two main part. The effect of differ...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/n9y9sq |