The prospective study of nickel oxide-based resistive random-access memory (RRAM) fabricated on the thru-silicon via (TSV) structure.
碩士 === 國立成功大學 === 微電子工程研究所 === 105 === Through Silicon Via (TSV) technology vertically connects the chips arranged in stack, which helps to enhance the chip performance by greatly shortening the length of the conducting wire. On the other side, as the development of memory constantly aiming for fast...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dvn733 |