Quantum Transport Modeling for Nanoscale FET with Non-Equilibrium Green’s Function Formalism
碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 105 === As complementary metal–oxide–semiconductor (CMOS) technology progresses, device dimensions have been scaled into the nanometer regime. The electronic devices would show more pronounced wave characteristics of carriers when operating. The non-equilibrium G...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/es8b59 |