Analysis of the Short-term Response in the Drain Current of a-IGZO TFT to Light Pulses
碩士 === 國立交通大學 === 光電工程研究所 === 105 === The highly transparent characteristic of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) makes it possible for the application of the transparent electronics. However, the electrical instability induced by light illumination and gate bi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wnu2y2 |