Study of Multilayer TiNi Alloys as Gate Material for InGaAs NMOS Devices
碩士 === 國立交通大學 === 材料科學與工程學系所 === 105 === For a recent year, the scaling down devices has been launched by new architecture or new materials. High efficiency and low power consumption are significantly important for electronics devices based on a new trend of electronic developments. Metal-Oxide-Semi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/7ytjsy |