Characterization of Single-layer and Multi-layer Metal Films Contacts on P-Type Gallium Antimonide
碩士 === 國立交通大學 === 材料科學與工程學系所 === 105 === As the scaling of device continued shrinking, the Si-based complementary metal-oxide-semiconductor (CMOS) has faced difficulties in enhance the device performance due to the physical limitation. For the past few years, the introduction of alternative material...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9896nt |