Epitaxial growth of Ge on In0.51Ga0.49P/GaAs (100) substrate by ultra-high vacuum chemical vapor deposition
碩士 === 國立交通大學 === 材料科學與工程學系所 === 105 === The report by Kuan Chin Wen [ref] revealed that Ge epitaxial film can be grown on In0.51Ga0.49P/GaAs (100) with 6°-offcut toward [110] substrate by ultra-high vacuum chemical vapor deposition (UHVCVD) system for the first time. This successful growth of Ge on...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/tyec62 |