Atomic Layer Deposited TiO2 Thin Films for the Surface Passivation of p-type Crystalline Silicon
碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === In this study, titanium oxide（TiO2）films were grown on FZ p-type Si substrates by an atomic layer deposition（ALD）system with TiCl4 and H2O precursors at different temperatures（80°C, 100°C, 150°C and 200°C）. The crystal structure, surface roughness, compositio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/69038172021736887630 |