Study on the Resistive Switching Characteristics of the Hafnium Oxide-Based Resistive Random Access Memory (RRAM) Devices
碩士 === 國立交通大學 === 電子研究所 === 105
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49820684399286580176 |