Characterization of Lateral Electric Field Induced Nitride Trapped Charge Movement in SONOS

碩士 === 國立交通大學 === 電子研究所 === 105 === In this thesis, we use single device to emulate the pattern effect in NAND string in order to analyze the physical mechanism of charge lateral migration. The sufficient lateral electric field is the key to detect the charge lateral migration signal. In here, we di...

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Bibliographic Details
Main Authors: Chen, Wei-Chun, 陳威郡
Other Authors: Wang, Tahui
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/28527891046062600600