Natural Length Based Predictive TCAD for the Subthreshold Swing and Drain-Induced Barrier Lowering in Bulk FinFETs
碩士 === 國立交通大學 === 電子研究所 === 105 === In order to keep pace with the Moore’s Law, suppressing short-channel effects through novel multiple gate geometry architectures of device is a practical solution to make shrinking possible. To accurately predict the subthreshold swing (SS) and drain-induced barri...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52019736117709425994 |