Aluminum oxide layer prepared by plasma oxidation on single-crystalline aluminum film

碩士 === 國立交通大學 === 電子研究所 === 105 === In this thesis¸ the plasma oxidation on single-crystalline Aluminum is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with Auger Electron Spectroscopy (AES) , Transmission...

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Bibliographic Details
Main Authors: Chen, Peng-Yu, 陳鵬宇
Other Authors: Lin, Sheng-Di
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/q3e939