Aluminum oxide layer prepared by plasma oxidation on single-crystalline aluminum film
碩士 === 國立交通大學 === 電子研究所 === 105 === In this thesis¸ the plasma oxidation on single-crystalline Aluminum is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with Auger Electron Spectroscopy (AES) , Transmission...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2016
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Online Access: | http://ndltd.ncl.edu.tw/handle/q3e939 |