| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 105 === In this thesis¸ the plasma oxidation on single-crystalline Aluminum is presented. The dependence of oxidation rates on the N2O flux, the substrate temperature, the RF power, and the chamber pressure is studied with Auger Electron Spectroscopy (AES) , Transmission Electron Microscope (TEM) and Atomic Force Microscope (AFM). The dependence of oxide thickness and oxidation time is plotted, and also compared to the mathematic model in thermal oxidation.
In this thesis, the Al2O3 is applied to gate oxide in GaAs MOSFET. The I-V characteristic of MOSFET is studied, and the interface quality is checked by X-ray Photoelectron Spectroscopy (XPS).
Our work provides another way to prepare a smooth nano-scale Al2O3 film on aluminum, and we are hoping that this fabrication process of plasma oxidation will be improved in future.
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