Optimization of Vertical InAs/GaSb Hetero-Junction Tunneling Field-Effect Transistors
博士 === 國立交通大學 === 電子研究所 === 105 === The semiconductors technology has entered 10 nanometers generation node by 2016. In the near future, the semiconductors technology will reach 7/5 nanometers generation or even move toward the 3 dimensional stacking. However, accompanying the increase of device den...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nq64s2 |