Gated Hall Bar, Mobility Characteristics, and DMOSFET Study in 4H-SiC Power Devices
碩士 === 國立交通大學 === 電子研究所 === 105 === As a wide-band gap material, Silicon Carbide owns the advantages such as high breakdown electrical field, high thermal conductivity and capability of thermal oxidation, so it is suitable for high temperature and high voltage power device applications. However, the...
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h2qwyg |