Modeling and Comparison for the Quantum Capacitance Effects on the Gate Inversion Capacitance of Ultra-Thin-Body, Double-Gate and Gate-All-Around III-V n-MOSFETs
碩士 === 國立交通大學 === 電子研究所 === 105 === This work models and compares the impact of quantum capacitance (Cq) on inversion capacitance (Cinv) of double-gate (DG), ultra-thin-body (UTB), and gate-all-around (GAA) III-V n-MOSFETs. Through TCAD quantum-mechanical simulation corroborated by model calculation...
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79455461256149658285 |