The Simulation of 5μm and 7.5μm Pixel Using 0.11μm CMOS Technology for Back Side Illumination CMOS Image Sensor
碩士 === 國立交通大學 === 電子研究所 === 105 === In the development of CMOS image sensor, the insufficient of photosensitivity, noise, sensitivity and other issues have been resolved. Among different types of CIS sensors, the performance of four transistors back side illumination (4T BSI) is particularly superio...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yb2646 |