Investigation of Design Space for Ge UTB Negative Capacitance FETs and Fin-LER Induced Variability for Negative Capacitance FinFETs
碩士 === 國立交通大學 === 電子研究所 === 105 === In this thesis, we first investigate the design spaces for hetero-channel Ge UTBB NCFET. The results show the channel permittivity difference and the effective built-in back gate bias which is significant for Ge pFET are two primary factors that affect the UTBB NC...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bex36d |