Efficiency improvement of MoS2 field-effect transistors by using high channel electric field
碩士 === 國立交通大學 === 電子物理系所 === 105 === In this study, MoS2 is chosen as channel materials for making field-effect transistors (FETs), because of its high on-off ratio and stability. We utilize mechanical exfoliation to make MoS2 nanometer thin flakes on the silicon substrate. The source and drain FE...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98e229 |