Research of GaN Grown in Si Nano-Trench Structure by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 105 === GaN were grown on trench-etched Si substrates by molecular beam epitaxy (MBE). The Si(110) trenches were anisotropic etched into Si(111) plane by KOH solution. The GaN deposition time and thickness are 25 min, 50 min, 75 min, 4 hr and 135 nm, 280 nm, 411 nm, 1.48...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5t5q32 |